| 摘要 |
PURPOSE:In growing single crystal by Czochralski method, to prepare high-quality single crystal having a given outer diameter and uniform composition, by stirring forcibly melt of raw material kept in a crucible by an agitating blade. CONSTITUTION:After the seed crystal 4 is immersed in the silicon melt in the crucible 10, the seed crystal 4 and the silicon melt 11 are pulled up through the elevating mechanism 2 rotating crystal and solidified to prepare silicon single crystal. The elevating mechanism 2 rotating crystal consists of the inner revolving shaft 5 to which the seed crystal 4 is attached, the outer revolving shaft 6 (the arm parts 7a and 7b, platinum lines 8a and 8b) to which the agitating blade 9 are fixed), and the shafts 5 and 6 in such a way that setting of number of revolutions and vertical movement are attained independently. By the use of the above-mentioned device, the single crystal is prepared under conditions wherein the melt 11 is forcedly stirred generally only by the agitating blade 9 and stirring effect by rotation of pulled crystal can be disregarded.
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