| 摘要 |
PURPOSE:To form a high-concentration Bi-replaced iron garnet single crystal thin-film in an epitaxial manner by sputtering a target consisting of an oxide containing Bi, Fe and a rare earth element R and applying a detached constituent onto a Gd3Ga5O12(GGG) substrate at a fixed temperature. CONSTITUTION:A GGG substrate is placed on a stainless-steel base, the sintered body of polycrystalline iron garnet of a constitution formula of Gi2.0Y1.0Fe3.8 Al1.2O12 is fitted to an electrode, and the GGG substrate is heated at 350- 700 deg.C through the stainless-steel base. Glow discharge is executed in a mixed gas atmosphere of Ar and O2, the substrate is sputtered by Ar ions, constituents are detached from iron garnet, and a single crystal thin-film of (Y, Bi)2(Fe, Al5O12 is formed on GGG in an epitaxial manner. According to the method, the magnetic thin-film, a Faraday rotation-angle thetaF thereof is extremely large, coercive force Hc thereof is also sufficiently large and an absorption coefficient alpha thereof is enough small, is obtained. (Bi2O3)x(R2O3)y(Fe2O3)z(M2O3)u [0<x<=3/2, 0<y<=3/2, 0<z<5/2, 0<=u<=5/2, and M represents Al, Ga, Sc, Tl, etc.] is used generally as a target.
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