| 摘要 |
PURPOSE:To diffuse the surfaces of a large number of semiconductor substrates without fusing or damage on their surfaces by holding annular semiconductor boards having the same outer diameters as the substrates among each of the substrates between two blocks and heating the semiconductor boards in an atmosphere containing an impurity element. CONSTITUTION:Si rings 8 having the same outer diameters as Si substrates 1 and several mm. thickness are held among the Si substrates 1, fixed by Si blocks 7 and put into a pipe 6, and inserted into a core pipe 4 and heated 5. An impurity element in the pipe 4 enters a central space 9 from fine gaps among the substrates 1 and the surfaces of the rings 8, and diffuses to the substrates 1. The element does not diffuse to the fringes of the substrates, but it is hardly lost substantially. According to the method, the central sections of the substrates are not fusion-bonded or damaged, strain can also be prevented, and the number of annular semiconductor boards far more than the number of them by a grooved jig can be treated simultaneously. |
