| 摘要 |
PURPOSE:To obtain an FET which performs a high speed operation by a method wherein the recess of two-stage structure having the deeply formed center part is formed on the surface layer part of a semiconductor substrate, a half-cut cylindrical gate electrode surrounded by a gate oxide film is filled in the center part of the surface part of the semiconductor substrate, the surface of the recess is covered by a gate oxide film, a semiconductor layer is placed thereon, a half-cut cylindrical gate electrode of the same structure as above is provided on said semiconductor layer, the semiconductor layer located between the electrodes is used as a channel region and a source region and a drain region are provided in the semiconductor layer. CONSTITUTION:The recess of two-state structure having a deeply-formed center part is formed on the surface layer of a semiconductor substrate, and a half-cut cylindrical gate electrode 12 surrounded by a gate oxide film is placed in said center recess part. Then, the entire bottom face of the recess is covered by a gate oxide film, a semiconductor layer 8 is filled in the recess, another gate electrode 12 of the same structure and code as above-mentioned gate electrode 12 is provided on the layer 8 corresponding to the electrode 12 already formed, the semiconductor layer 8 located between the electrodes 12 is used as a channel region, and a source region 14 and a drain region 15 are formed on both sides of the electrode 12. |
