发明名称 DETECTION OF END POINT OF ETCHING
摘要 PURPOSE:To prevent generation of a defective product owing to over- and underetching by etching an insulating layer formed on a conductive dummy electrode provided on a substrate and detecting the end point of etching to the insulating layer from the presence or absence of the electrical conduction between a pair of the contact window parts obtd. by the etching. CONSTITUTION:A conductive metallic layer 3 is deposited and formed on a magnetic substrate 1 which is coated thereon with an insulating layer 2 consisting of a transparent insulating material such as SiO2. The layer 3 is then etched to form the 1st wiring pattern 4 and at the same time to form a dummy electrode 5 near the same. The 2nd insulating layer 6 consisting of a transparent material such as SiO2 is laminated and formed on the pattern 4 and the electrode 5 and thereafter the layer 6 is masked and is subjected to pattern etching. Window parts 7, 8 for connecting the wiring pattern are provided on the part between the pattern 4 and the 2nd wiring pattern where electrical conduction is necessary and a pair of contact window parts 9, 10 are also provided on the layer 6 on the electrode 5. For example, a pair of detecting pins 11, 12 are pressed in the parts 9, 10 and the end poing of the pattern etching is judged from the presence or absence of the electrical conduction between the pins 11 and 12.
申请公布号 JPS60106976(A) 申请公布日期 1985.06.12
申请号 JP19830213561 申请日期 1983.11.14
申请人 SONY KK 发明人 WADA YOSHITAKA
分类号 G11B5/31;C23F1/00;C23F4/00;H01L21/302;H01L21/306;H01L21/3065 主分类号 G11B5/31
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