Method of ion beam synthesis of thin silicon nitride films and resulting articles

摘要

A method is disclosed for the synthesis of ultra-thin silicon nitride (SixNy) films by the direct interaction of a low energy noble ion beam (e.g. Ar+ or He+), with NH3 physically absorbed on a silicon surface. The method is directed toward applications which require the use of ultra-thin insulating layers, such as in MIS technology. The disclosed method provides for the synthesis of ultra-thin films of silicon nitride via the interaction of NH3 absorbed on a silicon substrate and a low energy nobel ion beam. Preferential absorption of NH3 is effected by cooling of the substrate below the boiling point of NH3. The ion beam is used to generate reactive N and Si species which combine to form compounds of silicon nitride. The physical appearance of the films formed by this method is comparable to those produced by low pressure chemical vapor deposition.