SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To make the charge storage capacity larger than the capacity corresponding to the area projected on a substrate of a conductive layer comprising an electrode by a method wherein a semiconductor layer is protruded beyond a substrate and a conductive layer is provided on the upper surface and the sides of the semiconductor layer and the substrate through the intermediate of dielectric layer to build up a charge storage capacity. CONSTITUTION:An n type Si is deposited in a window by selective epitaxial growing process making the layer resistance of the epitaxial layer 20OMEGA/? to form an n type Si epitaxial layer 5. Beides, an n<+> type layer 6 is formed below the epitaxial layer and a PSG film by the heat generated during and after the epitaxial growing process. At this time, the impurity in the PSG film is introduced not only into an Si substrate directly below the PSG film but also into the epitaxial layer as well as the lower side of the layer 6 through a little bit. Firstly the PSG film is removed leaving the epitaxial layer. Secondly the substrate and the epitaxial layer is coated with an SiO2 film 7 as a dielectric layer. Finally the SiO2 film 7 may be covered with a polysilicon film 8 as a conductive layer to build up a charge storage capacity.