| 摘要 |
PURPOSE:To form a polycrystalline silicon layer of large film thickness with ease and in a short time, by applying an energy beam having such an energy as capable of melting a minute silicon piece layer made to stick on a wafer substrate. CONSTITUTION:A minute silicon piece of about 1mum is made to stick on a wafer substrate 10 so as to form a minute silicon piece layer 12. This minute silicon piece may be stuck on the substrate 10 only by stacking a powdered silicon piece on the surface of the substrate, or by applying it on the substrate to be fixed thereon by the use of an organic substance or the like if necessary. Thereafter, an energy beam 16 having such an energy as capable of melting the minute silicon piece layer 12 sufficiently is applied thereon so as to form a polycrystalline silicon layer 14. When a YAG laser capable of outputting an energy of about 10-15J/cm<2>, for instance, is employed for the energy beam 16, a polycrystalline silicon layer 24 having a film thickness of about 10mum can be formed by the application of said beam for about two minutes. |
