| 摘要 |
PURPOSE:To enable to form the microscopic pattern of submicron order width by a method wherein light is used in formation of patterns in which a multilayer resist process is performed. CONSTITUTION:A far ultraviolet rays sensitive resist is coated on a pattern forming film 2, and the first layer resist film 3 is formed by baking. Then, the second layer resist film 4 is formed by coating an ultraviolet ray sensitive resist. When the above is exposed and developed by a stepper, the pattern of the second layer resist film 4 can be obtained. Then, when a flood exposure of far ultraviolet ray is performed, a sand-marked part 3 is exposed to light. Subsequently, the second layer resists film 4 is removed by dipping a substrate 1 into ethyl alcohol. Then, after the first layer resist film 3 has been dried up, the sand-marked part 3a is removed by performing a developing process using a linsing solution, the pattern 3b of the first layer resist film 3 is formed, an etching is performed using the above as a mask on a pattern forming film 2 utilyzing the ordinary technique, and a pattern 2a is formed on the pattern forming film 2. |
