发明名称 Reactor and susceptor for chemical vapor deposition process
摘要 A reactor for use in a chemical vapor deposition process occurring in a radiant absorption heater system employs a vertical gas flow reaction vessel and a novel substantially solid susceptor configured as a truncated wedge. The susceptor is characterized by a high utilized area, resulting in a high wafer capacity and low power requirement.
申请公布号 US4522149(A) 申请公布日期 1985.06.11
申请号 US19830553962 申请日期 1983.11.21
申请人 GENERAL INSTRUMENT CORP. 发明人 GARBIS, DENNIS;CHAN, JOSEPH Y.;GRANATA, AMEDEO J.;HELLER, ROBERT C.
分类号 C23C16/00;C23C16/44;C23C16/458;H01L21/205;(IPC1-7):C23C13/08 主分类号 C23C16/00
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