发明名称 |
Reactor and susceptor for chemical vapor deposition process |
摘要 |
A reactor for use in a chemical vapor deposition process occurring in a radiant absorption heater system employs a vertical gas flow reaction vessel and a novel substantially solid susceptor configured as a truncated wedge. The susceptor is characterized by a high utilized area, resulting in a high wafer capacity and low power requirement.
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申请公布号 |
US4522149(A) |
申请公布日期 |
1985.06.11 |
申请号 |
US19830553962 |
申请日期 |
1983.11.21 |
申请人 |
GENERAL INSTRUMENT CORP. |
发明人 |
GARBIS, DENNIS;CHAN, JOSEPH Y.;GRANATA, AMEDEO J.;HELLER, ROBERT C. |
分类号 |
C23C16/00;C23C16/44;C23C16/458;H01L21/205;(IPC1-7):C23C13/08 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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