| 摘要 |
PURPOSE:To eliminate a change in the amount of exposure and thereby to enable the formation of a pattern of very high accuracy, by etching the surface of a photoelectron generating film with gas plasma prior to an exposure in an electron beam exposure method wherein ultraviolet rays are applied on a photoelectron generating film having a desired pattern and photoelectrons emitted from the photoelectron generating film are reduced, image-formed and projected so as to transfer the photoelectron generating film. CONSTITUTION:In a reticle 3, a platinum film 11 is connected on the whole surface of a substrate 10, and further thereon a photoelectron generating film pattern is formed of a gold film 12. This reticle 3 is put in a sub-chamber 23 provided with an opposite electrode 25 for generating gas plasma, and an argon gas, for instance, is introduced therein to attain a degree of vacuum at several Torr below zero. Then, a power of 13.56MHz and several hundreds of watts is impressed to apply plasma etching onto the surface of the reticle, and thereby impurities on the surface of the gold film are remved. Thereafter a high vacuum is formed in the sub-chamber 23, and then the reticle 3 is transferred into a main chamber 21. According to this method, UV rays are applied on a purified photoelectronic film of the reticle, and a wafer quantity of generated beams.
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