发明名称 |
Boron nitride X-ray masks with controlled stress |
摘要 |
It has been found that stress in X-ray transparent films used to form masks for X-ray lithography also cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. A method is disclosed which anneals boron nitride films for use in X-ray masks in such a way as to control stress.
|
申请公布号 |
US4522842(A) |
申请公布日期 |
1985.06.11 |
申请号 |
US19820416290 |
申请日期 |
1982.09.09 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
LEVINSTEIN, HYMAN J.;MURARKA, SHYAM P.;WILLIAMS, DAVID S. |
分类号 |
C23C16/56;G03F1/14;(IPC1-7):B05D5/00 |
主分类号 |
C23C16/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|