发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To use most of an operating electric current for forming a high level output signal and reduce a substantial consumption of an electric current by setting small a differential MOSFET conductance connected to a load MOSFET of an electric current mirror type of an input side. CONSTITUTION:Between a common source of differential amplifiers MOSFET Q28, Q29 and a power source voltage Vcc, a P channel type power switch MOSFET Q27 receiving an operating timing signal doc is disposed. Between a drain of the differential amplifiers MOSFET Q28, Q29 and a grounding potential point of a circuit, an N channel type active load MOSFET Q31 in a formation of an electric current mirror is disposed. Between a common drain of the MOSFET Q29, Q31 of the outputs of the differential amplifying circuit and the grounding potential point of the circuit, an N channel MOSFET Q34 receiving a control signal doc is disposed. A complementary signal of an ECL level in the other case, is supplied to an input of differential amplifying circuits (Q36-Q40) similar to the above in an opposite phase.
申请公布号 JPS61211896(A) 申请公布日期 1986.09.19
申请号 JP19850052223 申请日期 1985.03.18
申请人 HITACHI LTD 发明人 IDE AKIRA;YAZAWA YOSHIAKI;SAITO YOSHIKAZU;YAMAMURA MASAHIRO
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
主权项
地址