| 摘要 |
PURPOSE:To obtain the titled device, charge potential thereof is sufficient, residual potential thereof does not rise and which has excellent repetitive characteristics and is particularly proper as a photosensitive body for electrophotograph, by forming an amorphous film containing silicon in four layer structure and giving the specific resistance values of each layer specific relationship. CONSTITUTION:An amorphous film 12 containing silicon is formed on a substrate 11, and the film 12 is formed in multilayer structure, and has a first layer 13, a second layer 14, a third layer 15 and a fourth layer 16 in the direction of film thickness from the substrate 11 side. When the specific resistance values of these each layer 13, 14, 15, 16 are represented by rho I , rhoII, rhoIII, rhoIV, the relationship of rho I <rhoIII<rhoII<rhoIV is satisfied. Said amorphous film 12 shall contain elements such as hydrogen or hydrogen and a halogen element, and the layers except the third layer 15 shall contain one or more of elements of IIIa group elements, Va group elements, nitrogen, carbon and oxygen and the third layer 15 one or more of elements of the IIIa group elements. |
