| 摘要 |
PURPOSE:To prevent breakdown of gates and generation of abnormal current properties, by providing apertures in a semiconductor substrate, burying a polycrystalline silicon layer in each aperture, making the layer dielectric and forming an element separating region. CONSTITUTION:An oxide 24 is formed within each of apertures 23 of a substrate 21 such that the oxide has a protuberant surface. A polycrystalline film 25 is then left within each of the apertures 23 so as to be present on the oxide 24 and in the upper portion of the inside the aperture 23, whereby aperture 23 is filled with the oxide 24 and the polycrystalline silicon film 25. After than, the polycrystalline silicon film 25 is made dielectric, and an element separating region 27 is formed to be approximately planar with respect to the element region. In such a manner, the substrate 21 can be prevented from being exposed from the aperture 23 in a part of the side faces of the element, and therefore breakdown of gates as well generation of abnormal current properties can be effectively prevented.
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