| 摘要 |
PURPOSE:To realize single crystallization for a wider area without precise control on the occasion of irradiation of energy beam by irradiating non-single crystal semiconductor layer formed in such a way as covering a trench at a part of formed insulator surface with a belt-shaped energy beam through the oblique scanning for the scanning direction. CONSTITUTION:A linear groove 12 is formed by the reactive ion etching on the surface of SiO2 substrate 11. Thereafter, a polycrystalline Si layer 13 is deposited on the SiO2 substrate 11 by the CVD method and the Si ion 14 is implanted to the entire part of polycrystalline Si layer 13. A laser beam 15 collimated like a thin belt is formed on the polycrystalline Si layer 13 and a single crystal Si layer 16 can be formed to the greater part of polycrystalline Si layer 13 by irradiating the trench 13 including the polycrystalline Si layer 13 corresponding to the groove 12 with the laser beam 15 in such a manner that the belt-shaped laser beam is inclined by the angle theta for the scanning direction S.
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