| 摘要 |
PURPOSE:To form a resist pattern high in contrast by forming a thin org. film for absorbing light on a metallic pattern to alleviate reflection of far UV rays. CONSTITUTION:The thin org. film 3 absorbing >=90% of UV rays of <=300nm wavelength is formed on the metallic film pattern 2, and it is practically used for a photoresist, and especially effectively used for a polystyrene type negative photoresist. This structure permits a mask capable of alleviating the effect of UV rays to be prepared. |
