| 摘要 |
PURPOSE:To obtain an MOSIC or the like with high performance and high integrity, while preventing the element properties and integrity from being degraded by a channel stopper, by selectively removing a third mask on a semiconductor substrate and by introducing an impurity into the substrate with the use of the layered mask and the third mask left on the side faces thereof. CONSTITUTION:A thin silicon oxide film 2 is formed on the surface of an N type silicon wafer 1. On this silicon oxide film 2, a layered film consisting of a lower nitride film 3 and an upper photoresist film 4 is selectively formed. A photoresist film 14 with a low viscosity is applied on the whole surface of the layered film and N type silicon wafer 1, and is etched for forming a photoresist film 15 covering the upper and side faces of the nitride film 3. After that, impurity ions of a high concentration are implanted into the surface of the N type silicon wafer 1 with the use of the nitride and photoresist film 3 and 15 as a mask. In such a manner, a channel stopper can be providing without degrading the element properties or decreasing the integrity.
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