| 摘要 |
PURPOSE:To obtain a capacitor having high precision using double layer structure of polycrystalline silicon layers by forming an insulating film shaped while coating the upper section of a second capacitor electrode and a metallic wiring layer shaped to the central section or approximately the whole surface of the second capacitor electrode through a contact hole bored to the insulating film. CONSTITUTION:The surface of an silicon substrate 11 is coated with an silicon oxide film 12, a first layer polycrystalline silicon film is deposited on the silicon oxide film 12, and the first layer polycrystalline silicon film is patterned to form a first capacitor electrode 13. A thermal oxide film 14 is grown on the surface of the first capacitor electrode 13, and a second layer polycrystalline silicon film 15 is deposited on the whole surface. The second layer polycrystalline silicon film 15 is patterned, and the second capacitor electrode 15, which is smaller than the first capacitor electrode 13 and is opposed to the electrode 13, is shaped. A CVD-SiO2 film 16 is deposited on the whole surface, and contact holes 17, 18 are bored to the film 16. An aluminum film is evaporated and patterned, thus forming wiring layers 19, 20. |
