| 摘要 |
PURPOSE:To enable the formation of a planar structure without hillocks by forming a gold film in a circuit shape on a tantalum film formed as a conductor film on a substrate, and anodizing the tantalum film with the use of the gold film as a mask pattern. CONSTITUTION:A tantalum film 13 as a conductor film is formed on a substrate 12 of GGG or the like by means of spattering. A gold film 14 as a main conductor layer is formed thereon also by means of spattering. The gold film 14 is covered with photoresist 15 except for the region to the passivated, and the uncovered portion of the gold film 14 is removed by plasma etching or the like. When the tantalum film 13, thus exposed by removing the film 14 except for the required portion, is passivated by anodizing with oxalic acid solution with the use of the photoresist 15 and the circuit-shaped gold film 14 left under the photoresist 15 as a mask patter, the thickness is increased by oxidization, and an anodized portion 16 having the same level with the surface of the gold film 14 is formed. Thus a planar structure is completed.
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