| 摘要 |
<p>A wafer of silicon, in which semiconductor devices are formed, is bonded to a supporting plate (5) of silicon to support it during certain processing steps. Specific examples relate to the profiling of peripheral edges of high voltage devices, and the passivation of pn junctions. The technique is also used to make diodes having very thin p and n layers. After the processing steps the supporting plate may typically be sawn to separate the devices. <IMAGE></p> |
