发明名称 HEAT-TREATMENT FURNACE
摘要 PURPOSE:To prevent adhesion of impurities to a semiconductor wafer etc. before setting to a reaction tube by a method wherein a gas injection hole is provided to a portion where a boat of a fork is placed on. CONSTITUTION:When a portion 29, where a boat 28 of a fork 23 is placed on, positions outside a reaction tube 21, gas is supplied from a fork main body 24 side to a gas injection tube 25 and the gas is blown against a tip section of the main body 24, the boat 28 and a semiconductor wafer 27 from the injection hole 26 of the injection tube 25. Thereby, adhesion of impurities can be prevented. When a mounting section 29 is entered wholly to the reaction tube 21, gas injection is stopped.
申请公布号 JPS61210624(A) 申请公布日期 1986.09.18
申请号 JP19850051703 申请日期 1985.03.15
申请人 TOSHIBA CORP 发明人 KAMIJO HIROYUKI;OGINO MASANOBU
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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