| 摘要 |
<p>PURPOSE:To enable arbitrary setting of a temperature coefficient as a whole, by implanting ions in first resistive elements formed of polysilicon and second resistive elements formed of ion-implanted layers. CONSTITUTION:The resistive device is constructed of an insulating film 3 of silicon oxide or the like formed on a semiconductor substrate 2 by a thermal oxidation method or the like, first resistive elements 4 formed of polysilicon, having a negative temperature coefficient and patterned on the insulating film 3, second resistive elements 5 having a positive temperature coefficient, formed between the first resistive elements 4 and separated therefrom by the insulating film 3 on the semiconductor substrate 2, insulating films 6 integrated with the insulating film 3 on the semiconductor substrate 2 and covering the respective surface of the first resistive elements 4, and electrodes 7 each connecting the first resistive element 4 and the second resistive element 5 in series. The first resistive element 4 is formed of polysilicon and has a negative temperature coefficient, while the second resistive element 5 is formed of a P-type ion-implanted layer and has a positive temperature coefficient. By implanting ions in the group of the first resistive elements 4...4 and the group of the second resistive elements 5...5, the temperature coefficient of the first resistive elements 4 or the second resistive elements 5 is changed. According to this constitution, it is made possible to conduct adjustment so that a specified temperature coefficient can be set as a whole.</p> |
