发明名称 |
FABRICATING INTEGRATED CIRCUITS |
摘要 |
A millimeter wave integrated circuit (MIC) includes both low power components and high power components, e.g. Gunn diodes, disposed on a common semi-insulating semi-conductor substrate. Each high power component is formed in an active epitaxial layer and is provided with a heat sink comprising a thermally conductive material deposited in an opening in the back of the substrate below the compound. The low power components are isolated by an implanted proton layer. |
申请公布号 |
GB2100925(B) |
申请公布日期 |
1985.06.05 |
申请号 |
GB19810019677 |
申请日期 |
1981.06.25 |
申请人 |
* STANDARD TELEPHONES AND CABLES LIMITED |
发明人 |
JOSEPH * MUN |
分类号 |
H01L47/02;H01L21/48;H01L23/36;H01L29/864;(IPC1-7):H01L23/36;H01L27/26 |
主分类号 |
H01L47/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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