发明名称 Semiconductor memory device.
摘要 <p>A semiconductor memory device having an operational mode such as a nibble mode or page mode, wherein, with a first address strobe signal (RAS) kept in an active state, a second address strobe signal (CAS) is successively switched between an active state and standby state, thereby enabling successive data output (Dout). Previous data output is once reset in accordance with the switchover of the second address strobe signal to the active state while the first address strobe signal is in the active state, before data output is performed, and the reset operation of the data output is also performed when both the first and second address strobe signals are switched to the standby state, so that the period of the output data can be expanded.</p>
申请公布号 EP0143647(A2) 申请公布日期 1985.06.05
申请号 EP19840308237 申请日期 1984.11.28
申请人 FUJITSU LIMITED 发明人 TAKEMAE, YOSHIHIRO;NAKANO, MASAO;SATO, KIMIAKI;NAKANO, TOMIO SHIRAKATADAI-JUTAKU 12-404
分类号 G11C11/401;G11C7/10;G11C8/00;G11C8/04;G11C8/18;G11C11/409;(IPC1-7):G11C8/00 主分类号 G11C11/401
代理机构 代理人
主权项
地址