发明名称 Process for producing resist patterns and dry film resist suitable for said process
摘要 In the production of resist patterns by applying a photosensitive, positive-working resist layer based on photodegradable polymers to a substrate, image-wise exposing the resist layer to actinic light and removing the exposed layer portions to develop the resist pattern, a photosensitive resist layer is used which is made of a poly(diacetylene) which is, in particular, soluble. The invention also relates to dry film resists with a temporary, dimensionally stable layer base, a photosensitive photodegradable resist layer applied thereto and based on poly(diacetylenes), which are preferably soluble, and, optionally, a top layer on the photosensitive resist layer.
申请公布号 DE3342829(A1) 申请公布日期 1985.06.05
申请号 DE19833342829 申请日期 1983.11.26
申请人 BASF AG 发明人 WEGNER,GERHARD,PROF.DR.;MUELLER,MICHAEL
分类号 G03C1/72;G03C5/00;G03F7/004;G03F7/039;G03F7/26;(IPC1-7):G03F7/00;G03C1/68 主分类号 G03C1/72
代理机构 代理人
主权项
地址