发明名称 VERFAHREN ZUR GALVANISCHEN HERSTELLUNG METALLISCHER, HOECKERARTIGER ANSCHLUSSKONTAKTE
摘要 A method of galvanic manufacture of bump-like lead contacts of semiconductor components. The lead contacts are formed of etchable metals having a surface coating of gold. The gold is chemically deposited onto the lead contacts in a first and in a second work step. In the first work step, the deposition occurs to a thickness of 10 to 200 nm, and in the second work step to a thickness of 50 to 200 nm. Etching processes and a tempering occur between the two work steps. The surface layer applied in the first work step is employed during the etching processes as an etching mask for the lead contacts. This surface layer then diffuses into the lead contacts during the tempering. The solderablity of the lead contacts is thus preserved over a longer than usual time span (factor of 20).
申请公布号 DE3343362(A1) 申请公布日期 1985.06.05
申请号 DE19833343362 申请日期 1983.11.30
申请人 SIEMENS AG 发明人 PAMMER,ERICH,DR.RER.NAT.;BISCHOFBERGER,OTFRIED
分类号 H01L21/60;C23F1/00;H01L21/288;H01L23/485 主分类号 H01L21/60
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