Composite type thyristor.

摘要

There is disclosed a composite type thyristor with a planar structure in which a thyristor (11) and a diode (12) are formed and connected on the same semiconductor substrate (13) such that their current supplying directions are opposite to each other. Between the gate region (14) of the thyristor (11) and the anode region (15) of the diode (12), an isolating region (25) for isolating these gate and anode regions (14, 15) is provided. This isolating region (25) is formed by an impurity diffusion layer (16A).