| 摘要 |
<p>A programmable read-only memory device comprises a memory cell transistor (Q3) which has a source, a drain, a floating gate, and a control gate formed over the floating gate. Programming of the device is performed by applying a high voltage (RWS) to the control gate and a high voltage (CLM) to the drain of the memory cell transistor. The high voltages are applied to the memory cell transistor under the control of respective program signals (DPGM, PGM). The device further comprises means (Q4-Q11, Cl-C3) for delaying the program signal (DPGM) for the control gate voltage, relative to the program signal (PGM) for the drain voltage, during the programming operation. The application of the programming voltage to the control gate is therefore delayed relative to the application of the programming voltage to the drain, which ensures reliable data writing even if the programming voltage level is less than normal.</p> |
