| 摘要 |
PURPOSE:To enable production of an a-Si electrophotographic sensitive body at a high speed by connecting and providing a dust collecting means having large capacity between a reaction chamber and an evacuating means. CONSTITUTION:A plasma CVD device is provided successively with an evacuating part B from one end of the main unit part A of the device. The evacuating part B is constituted of a dust remover 12, a rotary vacuum pump 8 and a mechanical booster pump 9. The dust remover 12 is mounted via conduits 13, 14 between a vacuum reaction vessel 1 and the pump system. The vessel 1 is evacuated by the vacuum pumps 8, 9 and a gaseous material such as silane is introduced into the reaction chamber where the a-Si film is formed on a drum-shaped substrate as a result of decomposition by glow discharge. The substantial part of the gaseous material generated during the reaction solidifies in the gas to form a powdery and granular material which is discharged through the conduit 13 from the vessel 1. Said material is introduced and captured into the dust remover 12 just before the pumps 8, 9. A bag filter type or Cottrel type is used for the remover 12. |
