| 摘要 |
Sintered silicon carbide composites containing diamond crystals are described. They are made through a process comprising: (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting one of said dispersions to produce a physically stable intermediate compact; (d) recompacting said intermediate with the remaining dispersion to produce a binary compact; (e) subjecting said binary compact to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (f) infiltrating said binary compact with liquid silicon, and (g) sintering the binary compact containing infiltrated silicon under conditions sufficient to produce a silicon carbide binder uniting the resultant composite. These composites may be formed in a variety of specialized shapes and are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance. |
