| 发明名称 |
Electrode and semiconductor device provided with the electrode |
| 摘要 |
A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an atomic radius larger than that of silicon, such as germanium or tin, and donor impurity or acceptor impurity.
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| 申请公布号 |
US4521794(A) |
申请公布日期 |
1985.06.04 |
| 申请号 |
US19840626487 |
申请日期 |
1984.07.03 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION |
发明人 |
MURASE, KATSUMI;MIZUSHIMA, YOSHIHIKO |
| 分类号 |
H01L21/285;H01L23/532;H01L29/45;(IPC1-7):H01L45/00 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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