NONVOLATILE MULTILAYER GATE SEMICONDUCTOR MEMORY DEVICE

摘要

A SIMPLE TECHNIQUE TO FABRICATE AN IMPROVED NONVOLATILE SEMICONDUCTOR MEMORY DEVICE An improved retention non-volatile memory device having either a silicon gate-nitride-oxynitride-oxide-semiconductor substrate structure or a silicon gate-oxynitride-nitride-oxynitride-oxide-semiconductor substrate structure and a method of forming the same is described. The oxynitride layer(s) may have either uniform or varying oxygen and nitrogen composition resulting in ungraded or graded oxynitride layer(s), respectively. All the gate dielectric layers are formed by low pressure chemical vapor depositions at the same temperature.