发明名称 DISPOSITIVO INCLUDENTE UNO STRATO DI SILICIO AMORFO
摘要 <p>An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a halogen selected from the group consisting of chlorine, bromine and iodine.</p>
申请公布号 IT1087651(B) 申请公布日期 1985.06.04
申请号 IT19770027014 申请日期 1977.08.26
申请人 RCA CORP 发明人
分类号 H01L31/04;C23C16/505;H01J29/45;H01L21/205;H01L21/28;H01L29/04;H01L29/167;H01L29/47;H01L29/872;H01L31/07;H01L31/10;H01L31/18;H01L31/20;(IPC1-7):H01L/ 主分类号 H01L31/04
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