| 摘要 |
PURPOSE:To prevent the disconnection and shortcircuit of wirings by removing by dry etching and flattening the unnecessary first wiring layer on an organic film when forming a multilayer wiring structure, thereby obtaining the flat surface of an insulating film in good reproducibility. CONSTITUTION:A PSG film 32 is formed as an insulating film by a CVD method on a semiconductor substrate 31, and with a photoresist film 33 as a patterned organic film as a mask the film 32 is selectively etched. Then, an aluminum film 34 is formed as a wiring layer having substantially the same thickness as the film 32 is formed on the overall surface. Then, a photoresist film 35 is, for example, spin-coated on the overall surface in such a manner to be thick on a recess and thin on the other portion. Subsequently, the films 35, 34 are etched until the unnecessary film 34 is eliminated. The remaining photoresist film 33' and 35' are removed by O2 plasma etching, a PSG film 36 is then formed by a CVD method on the entire surface, thereby obtaining a flat surface state.
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