APPARATUS FOR PRODUCING THIN COMPOUND FILM

摘要

PURPOSE:To enable formation of a thin compd. film having high quality in the stage of forming said film by ion beam vapor deposition by injecting directly a gas for reaction to the surface of a substrate. CONSTITUTION:A substrate 9 to be formed thereon with a thin compd. film is disposed in a vacuum vessel 10 and the molten metal 11 such as Zn or the like is heated to evaporate by a heater 5. The evaporated metallic particles are heated to a high temp. by the electrons 12 from a filament 6 for ionization and are ionized. The ions are accelerated by an accelerating electrode 8 and collide against the surface of the substrate 9. A gas 18 such as O2 to be combined with such metallic particles is vigorously injected by a nozzle 17 onto the surface of the substrate 9. Both metallic particles and gas for combination collide in the form of clusters 14, 19 having high activity against the surface of the substrate 9 by which the thin film of the compd. (ZnO in this case) having high quality is formed thereon. Since the O2 which is the reactive gas is directly injected toward the substrate, the rate of reaction is good and the gas is utilized at a high yield.