发明名称 |
Device for depositing a layer of polycrystalline silicon on a carbon tape |
摘要 |
A device for depositing a layer of polycrystalline silicon on a carbon tape comprises a bath of molten silicon through which the carbon tape is drawn vertically. Two semicircular channels are supported vertically in the vicinity of the edges of the tape with their concave side towards the tape. The channels are partially immersed in the bath so as to raise the level of its surface by capillary action. The device is applicable to the manufacture of solar cells.
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申请公布号 |
US4520752(A) |
申请公布日期 |
1985.06.04 |
申请号 |
US19840643927 |
申请日期 |
1984.08.24 |
申请人 |
COMPAGNIE GENERAL D'ELECTRICITE;SOCIETE NATIONALE ELF AQUITAINE |
发明人 |
BELOUET, CHRISTIAN |
分类号 |
B05C3/12;B05C3/132;B05D1/18;C23C2/22;C23C2/40;C30B15/00;C30B15/30;(IPC1-7):B05C3/172 |
主分类号 |
B05C3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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