| 摘要 |
PURPOSE:To obtain a thin film transistor which has less leakage without increasing manufacturing steps by forming films which include an amorphous semiconductor in germanium as gate insulating film and passivation film. CONSTITUTION:Thin insulating films which do not pass a light are used for a gate insulating film 11 and a passivation film 17. When germanium is mixed in an amorphous silicon in a solid solution state, a black film having low conductivity is formed. In other words, a light shielding insulating film can be formed. When the films are used for the films 11, 17, external light is not introduced into an amorphous silicon layer 12, thereby reducing the leakage current due to the light without adding excess steps to the steps of forming the conventional thin film transistor.
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