发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To obtain an output proportional to pressure by forming two pressure detecting sections the same in the characteristic on a one common semiconductor so that the residual strain equal between the two detecting sections to make the outputs of a bridge circuit due to the residual strain equal. CONSTITUTION:As two pressure detecting sections A and B are the same in the characteristic are formed on a one common semiconductor 1, the residual strain of the semiconductor 1 and the variation in the residual strain due to changes of the service temperature equal between the pressure detecting sections A and B. So, the output values of bridge circuits 4 and 4' based on the residual strain also are equal. When a pressure P to be measured is applied to the pressure detecting section A alone, the output of the pressure detecting section A gives the sum of V proportional to the pressure P and epsilon due to the residual strain. On the other hand, the output of the pressure detecting section B gives the output epsilon based on the residual strain. Therefore, difference between the two outputs is determined with differential amplifiers 10-12 or the like to obtain the output V purely proportional to the pressure P. This removes errors based on the residual strain and also eliminates effect from temperature.
申请公布号 JPS60100026(A) 申请公布日期 1985.06.03
申请号 JP19830207232 申请日期 1983.11.04
申请人 SHINDENGEN KOGYO KK 发明人 KAWAGUCHI AKIMITSU;TSUNOISHI CHIHARU
分类号 G01L9/04;G01L9/00;G01L9/06 主分类号 G01L9/04
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