| 摘要 |
PURPOSE:To contrive to improve the power transistor efficiency by uniformity of the width of a ring-like emitter region by the double-layer structure of an electrode. CONSTITUTION:The electrode is put in a double-layer structure in the power transistor having the ring-like emitter region 17. In other words, the first collector electrode 19 is formed in a collector contact region 14, the first emitter electrode 20 in the emitter region 17, and the first base electrode 21 in a base region 16. Thereafter, the second collector electrode 23 and the second emitter electrode 24 are formed on the first collector electrode 19 and the first emitter electrode 17. Thereby, since the base electrode can intersect with the electrodes 23 and 24, the emitter region 17 can be formed with a uniform width. Besides, an emitter resistor can be formed in series between the emitter electrodes 20 and 24 by adjusting the size of a through hole provided in the second insulation film 22 that connects the first emitter electrode. |
