| 摘要 |
The present invention relates to a process for passivation of photoconductive detectors constituted by Hg Cd Te, wherein a layer of native oxide is formed on the faces of an Hg Cd Te wafer and it is made to grow, by pure chemical oxidation in an aqueous solution of K3Fe(CN)6 and of KOH. An ordinary layer of ZnS is then formed on the oxide layer. The process makes it possible to produce high-performance infrared detectors, simply. |
