| 摘要 |
PURPOSE:To correct the defect of a pattern not more than 1mum by correcting the defect of the pattern for a mask with the pattern by thinly diaphragmed electron rays or ion beams. CONSTITUTION:When there is a defective section 3 in a chromium film pattern 2, etc. in line width or line interval of 0.5mum formed on the surface of a quartz substrate 1, Ar<+> ion-beams or electron beams 4 generated by an ion source or an electron ray source in a vacuum are diaphragmed by an electron lens system, and scanning-accelerated and projected when occasion demands, thus dissolving, evaporating and removing the defective section 3. Ion-beams or electron beams can be diaphragmed finely up to approximately several dozenAngstrom from a 1mum diameter, and a fine pattern not more than 1mum can be corrected. |
