SEMICONDUCTOR IC DEVICE

摘要

PURPOSE:To reduce the noise generating in the first conductive plate by a method wherein this plate constituting the capacitance element of a dummy cell is electrically connected to the second conductive plate constituting the capacitance element of a memory cell. CONSTITUTION:The capacitance element is constructed by providing the conductive plates 17C in the memory cell array (M.ARY) and the dummy cell array (D.ARY) by extension in the row direction. These plates are provided in the column direction at fixed pitches and constitute one matrix of the DRAM. Respective plates are connected between respective array by means of a connection wire 23; thus the first conductive plate made up of a plurality of plates 17C is formed in the dummy cell array part; and the second conductive plate having a larger capacitance value than the first conductive plate is constructed in the memory cell array part. These plates are electrically connected at each end and the part other than it. Then, the second conductive plate quickly reduces the noise generating in the first conductive plate.