| 摘要 |
PURPOSE:To reduce the side wall capacitance by a method wherein the second semiconductor layer having a larger energy gap than the first semiconductor layer of the first conductivity type is provided thereon, and a semiconductor layer of the second conductivity type is provided in the second semiconductor layer. CONSTITUTION:The first N type semiconductor layer 5 and the second N type semiconductor layer 6 are formed on a GaAs compound semiconductor substrate 4. The layer 6 is made up of a semiconductor layer having an energy gap larger than the layer 5. The gate region 7 is formed by introduction of a P type impurity to the layer 6. This manner reduces the capacitance per unit area in the side wall section ja. |
