| 摘要 |
PURPOSE:To contrive to improve the mounting density and to enlarge the function by providing horizontal wirings connecting functional elements to each other and vertical wirings to organically connect the integrated functional elements in stacking the titled devices in a plurality. CONSTITUTION:A semiconductor substrate 1, the first insulation layer 2, an MOSFET diffused layer 4, a channel region 5, and a gate electrode 6 are formed. Next, the second insulation layer 7 and the first aperture 9 are provided. Then, the third insulation layer 11 is formed on the surface 10 of the substrate. The first vertical wiring 12 is formed by being buried in the aperture. The horizontal wirings 13 are formed, thus connecting the functional elements and the first vertical wiring to the elements. Further, the fourth insulation layer 14 and the second aperture 15 are provided. A conductive material is formed over the entire surface, and, with the second vertical wiring 16 containing bumps 16a left, the other is removed. The semiconductor devices 101 and 102 of the first and second layers are connected to each other and then integrated. |
