| 摘要 |
PURPOSE:To increase the tunnel current by a method wherein a high electric field is impressed on the electrons transferring from the diffused layer formed on a substrate to the substrate via insulation film formed on the substrate and on the diffused layer. CONSTITUTION:The N<+> diffused layer 12, a field insulation film 13, an insulation film 14 of the first layer, a poly Si 15 of the first layer, a poly Si 17 of the second layer, and an insulation film 16 of the second layer are formed on the P type substrate 11. Impressing a potential so that the layer 12 and the substrate may become forward-biased causes electron injection to the substrate. When a high voltage positive to that of the substrate is impressed on the Si 17, the electrons injected to the substrate and transferring are attracted to the high electric field and then accumulated to the Si 16 through the tunnel current via layer 14, thus being stored in memory. |
