| 摘要 |
PURPOSE:To obtain a bipolar type transistor having excellent linearity to collector currents IC having a current amplification factor of hFE and low noises by forming protective films consisting of silicon nitride films of two layers. CONSTITUTION:A first layer P-SiN film 5 is grown on an silicon substrate 1 containing diffusion impurity layers on the surfaces thereof silicon dioxide 2 and an Al electrode 4 are formed, and thermally treated in a reducing atmosphere containing hydrogen, and linearity to IC having hFE of a transistor and noise characteristics are improved. A P-SiN film 6 is grown as a final protective film. A semiconductor device having reliability such as dampproofness better than PSG and one layer P-SiN film is obtained. |
