发明名称 DEVELOPER FOR NEGATIVE TYPE ELECTRON BEAM RESIST
摘要 PURPOSE:To inhibit swelling during development to the utmost and to attain high resolution by using lower ketone as a developer for specified polyisocyanurate as a negative type electron beam resist. CONSTITUTION:Diphenolic acid represented by formula I is polycondensed with 2-diallylamino-4,6-dichloro-s-triazine to prepare polyisocyanurate. This polyisocyanurate as a negative type electron beam resist is dissolved in a solvent, applied to a substrate, and baked in an oven. The resulting film is irradiated with electron beams, developed with lower ketone such as methyl ethyl ketone, and rinsed with a rinsing liq. contg. acetone and lower alcohol as principal components. The substrate is then etched.
申请公布号 JPS6097352(A) 申请公布日期 1985.05.31
申请号 JP19830204941 申请日期 1983.11.02
申请人 KANTOU KAGAKU KK 发明人 MIYAZAKI MASAO;MORI KIYOTO
分类号 G03F7/20;G03C5/08;G03F7/038;G03F7/30;G03F7/32 主分类号 G03F7/20
代理机构 代理人
主权项
地址