| 摘要 |
PURPOSE:To prevent irregular reflection, and to form a fine pattern with high accuracy by forming a lower layer organic layer having the large absorption index of ultraviolet rays to an irregular surface on a semiconductor substrate. CONSTITUTION:A phenol novolak group photo-resist film 2 is rotary-applied on a semiconductor substrate 1 with irregularities, and heated for 5min at 275 deg.C by a belt type infrared heating furnace. 90% or more of ultraviolet rays are absorbed, a foundation substrate is not affected approximately by irregular reflection on the irregular section even when the substrate is made of a high reflection film consisting of aluminum, etc., and a pattern can be transferred to an upper layer resist extremely accurately by ultraviolet rays. Even when the temperature of heat treatment is 250 deg.C, the absorption index of ultraviolet rays extends over 80% or more, and the device practically functions sufficiently. |
