发明名称 CURRENT OVERLOAD PROTECTED SOLID STATE RELAY
摘要 <p>A control circuit for protecting a metal oxide semiconductor field-effect power transistor from current overloads is disclosed in one embodiment of the control circuit. A silicon controlled rectifier is used to remove the bias voltage from the MOSFET in the event of a current overload. In another embodiment of the invention a bipolar transistor in combination with a second MOSFET is used to turn off the power MOSFET in the event of a current overload. The voltage appearing across the power MOSFET is used as an indication of a current overload condition.</p>
申请公布号 IL74400(D0) 申请公布日期 1985.05.31
申请号 IL19850074400 申请日期 1985.02.21
申请人 TELEDYNE INDUSTRIES, INC. 发明人
分类号 H03K17/08;H02H3/087;H03K17/082;H03K17/687;H03K17/78;H03K17/785;(IPC1-7):H01H/ 主分类号 H03K17/08
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